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Nexperia launches high-efficiency GaN FET with industry-leading performance
Nexperia announced its entry into the gallium nitride (GaN) FET market with the introduction of the 650 volt GAN063-650WSA, a very robust device with a gate-source voltage (VGS) of +/- 20 V and a temperature range of -55 to +175 °C. The GAN063-650WSA features a low RDS(on) - down to 60 mΩ - and fast switching to offer very high efficiency.

Nexperia is targeting high performance application segments including xEV, datacentres, telecom infrastructure, industrial automation and high-end power supplies. Nexperia’s GaN-on-silicon process is very robust and mature with proven quality and reliability, plus it is highly scalable as wafers can be processed in existing silicon fabrication facilities. More, this device is available in the industry-standard TO-247, allowing customers to benefit from exceptional GaN performance in a familiar package.

Toni Versluijs, General Manager of Nexperia MOS Business Group said: “This is a strategic move for Nexperia into the high voltage area, and we can now deliver technology suitable for xEV power semiconductor applications. Our GaN is a technology that is ready for volume production, and with scalability to meet high volume applications.  The automotive sector is a key focus for Nexperia and one which is forecast to grow significantly for two decades as electric vehicles replace those powered by traditional internal combustion engines as the preferred means of personal and public transport.”

The GAN063-650WSA GaN FET from Nexperia is the first in a portfolio of GaN devices that Nexperia is developing to address the automotive, communication infrastructure and industrial markets. More information on the new GAN063-650WSA, including product specs and datasheet is available at https://efficiencywins.nexperia.com/innovation/gan-introduction.html

2019112304 / 23.11.2019 / Electronic-components / NEXPERIA /

USB4 ESD devices from Nexperia provide optimum balance of protection and performance
TrEOS based protection offers industry-leading insertion and return loss to help meet tight system budgets

Nexperia launches new portfolio of application specific MOSFETs (ASFETs) for automotive airbags
Provides excellent transient linear mode performance using new SOA trench technology in LFPAK packaging providing designers with a smaller and more reliable choice.

Nexperia widens its offering of discrete components in miniature DFN packaging with side-wettable flanks
Rugged and reliable devices are AEC-Q101 compliant and save board space

Nexperia’s 50 µA Zener diodes portfolio extends battery-time and saves PCB space
The comprehensive product range covers every application from 1.8 V to 75 V

Nexperia introduces a range of A-selection Zener diodes for precise voltage reference with the industry’s lowest tolerance of ±1%
The comprehensive product range covers every application from 2.4 V to 75 V

Nexperia expands its wide bandgap semiconductor offering with new family of high-performance Silicon Carbide (SiC) Diodes
Samples of industrial-grade 650 V, 10 A SiC Schottky diode now available. Parts with 1200 V / 6-20 A current range and automotive-grade parts also planned

Nexperia delivers extremely low clamping bidirectional ESD protection devices for USB4 standard interfaces
TrEOS diodes offer industry-leading insertion loss and return loss characteristics for more robust USB4TM data transmission

Nexperia surface-mount device passes Board Level Reliability requirements for automotive application
Reliable and rugged CFP15B clip-bond FlatPower package selected by leading Tier 1 automotive supplier for use on an engine control unit

Nexperia launches ‘Power Live’ September 21-23 2021
Participate in live discussions on GaN, MOSFETs, power diodes and bipolar transistors for automotive and industrial applications; View on-demand video demos direct from Nexperia’s labs

Nexperia receives Bosch Global Supplier Award for the second time in a row
The prestigious award for ‘Purchasing of direct materials – Mobility Solutions’ recognizes Nexperia’s collaborative partnership with Bosch

Nexperia’s new Application-Specific MOSFETs (ASFETs) for hot-swap increase SOA by 166% and slash PCB footprint by 80%
New 80V & 100V devices minimize derating and improve current sharing for optimum performance, high reliability and reduced system cost

World’s smallest and thinnest standard logic DHXQFN packages from Nexperia in 14, 16, 20 and 24 pins
New packages enable large logic functions to be included in small form factor systems

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