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Nexperia and United Automotive Electronic Systems Co., Ltd. Agree Comprehensive Partnership for Gallium Nitride
Program will address the technical requirements for the power systems in electric vehicles

Nexperia, the expert in essential semiconductors, has announced a comprehensive partnership covering gallium nitride (GaN) power semiconductor devices with United Automotive Electronic Systems Co., Ltd. (UAES). The program will focus on power systems for EVs, with the aim to jointly develop automotive applications using GaN technology.

The electrification of cars, the increasing high power requirements of telecommunication equipment for 5G and the rise of Industry 4.0 require power conversion efficiencies for which GaN is expected to become the mainstream technology. These trends underpin the growing demand for power semiconductors in 2021 and beyond. UAES has already started using Nexperia GaN FETs in R&D and collaborative projects including vehicle-mounted chargers and high-voltage DC-to-DC converters for electric cars. Nexperia's GaN technology has extremely good figures of merit (RDS(on) x QGD) and reverse recovery charge (Qrr) metrics that support high switching frequencies and efficient power conversion. Nexperia produces GaN based on mature and reliable mass production techniques, largely in its own global production facilities, to manufacture products according to automotive AEC-Q101 standards.

UAES provides car manufacturers with advanced and comprehensive automotive powertrain and body control system solutions. It specializes in the development, production, and sales of gasoline engine management systems, transmission control systems, vehicle body electronics, and hybrid and electric drive control systems. Its five technology centers in China have world-class laboratories for entire vehicles, engines, automatic transmissions, and electric drive performance development. The advanced equipment effectively provides high-quality engineering services including system development, component development, and calibration for various Chinese car manufacturers.

Paul Zhang, SVP Sales & Marketing and General Manager, Nexperia, China comments: "The power density and efficiency of silicon-based GaN field-effect transistors will play key roles in the electrification of cars. We recognize the broad offering, industry position, and customer basis that UAES has in the automotive industry and we believe that our intensified collaboration in GaN will help both companies to deliver more advanced and efficient EV power system solutions to our customers. Earlier this month, we announced an increase in global production and R&D investment to fully support new product development. We intend to expand our investments and jointly to create a laboratory to develop automotive GaN technology applications."

A senior management spokesperson at UAES states: "We are pleased to work with Nexperia on the development of innovative EV vehicle power system solutions based on GaN technology. Nexperia is a leading semiconductor supplier for automotive applications. This partnership will help us reduce the number of devices used, reduce costs, increase power density, and increase the reliability and effectiveness of the entire system."

For more information on Nexperia GaN FETs, please visit: www.nexperia.com/gan-fets

2021031601 / 16.03.2021 / Various / NEXPERIA /

USB4 ESD devices from Nexperia provide optimum balance of protection and performance
TrEOS based protection offers industry-leading insertion and return loss to help meet tight system budgets

Nexperia launches new portfolio of application specific MOSFETs (ASFETs) for automotive airbags
Provides excellent transient linear mode performance using new SOA trench technology in LFPAK packaging providing designers with a smaller and more reliable choice.

Nexperia widens its offering of discrete components in miniature DFN packaging with side-wettable flanks
Rugged and reliable devices are AEC-Q101 compliant and save board space

Nexperia’s 50 µA Zener diodes portfolio extends battery-time and saves PCB space
The comprehensive product range covers every application from 1.8 V to 75 V

Nexperia introduces a range of A-selection Zener diodes for precise voltage reference with the industry’s lowest tolerance of ±1%
The comprehensive product range covers every application from 2.4 V to 75 V

Nexperia expands its wide bandgap semiconductor offering with new family of high-performance Silicon Carbide (SiC) Diodes
Samples of industrial-grade 650 V, 10 A SiC Schottky diode now available. Parts with 1200 V / 6-20 A current range and automotive-grade parts also planned

Nexperia delivers extremely low clamping bidirectional ESD protection devices for USB4 standard interfaces
TrEOS diodes offer industry-leading insertion loss and return loss characteristics for more robust USB4TM data transmission

Nexperia surface-mount device passes Board Level Reliability requirements for automotive application
Reliable and rugged CFP15B clip-bond FlatPower package selected by leading Tier 1 automotive supplier for use on an engine control unit

Nexperia launches ‘Power Live’ September 21-23 2021
Participate in live discussions on GaN, MOSFETs, power diodes and bipolar transistors for automotive and industrial applications; View on-demand video demos direct from Nexperia’s labs

Nexperia receives Bosch Global Supplier Award for the second time in a row
The prestigious award for ‘Purchasing of direct materials – Mobility Solutions’ recognizes Nexperia’s collaborative partnership with Bosch

Nexperia’s new Application-Specific MOSFETs (ASFETs) for hot-swap increase SOA by 166% and slash PCB footprint by 80%
New 80V & 100V devices minimize derating and improve current sharing for optimum performance, high reliability and reduced system cost

World’s smallest and thinnest standard logic DHXQFN packages from Nexperia in 14, 16, 20 and 24 pins
New packages enable large logic functions to be included in small form factor systems

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