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Low RDS(on) 40 V MOSFETs from Nexperia deliver highest power density for Automotive and Industrial applications
Class-leading SOA and Avalanche characteristics increase ruggedness and reliability

Nexperia, the expert in essential semiconductors, today announced new 0.55 mΩ RDS(on) 40 V power MOSFETs in the high-reliability LFPAK88 package for automotive (BUK7S0R5-40H) and industrial (PSMNR55-40SSH) applications. These devices are the lowest RDS(on) 40 V parts that Nexperia has ever produced and more importantly, they deliver power densities more than 50X greater than traditional D2PAK devices. More, the new devices also offer improved performance in both Avalanche and Linear mode, leading to increased ruggedness and reliability.

Neil Massey, Nexperia’s Product Marketing Manager comments: “The new 8 x 8 mm LFPAK88 MOSFETs combine the latest high performance superjunction silicon technology with our proven LFPAK copper clip technology, which is renowned for delivering significant electrical and thermal performance benefits. The resulting low RDS(on) enables us to pack more silicon in the package, improving power density and shrinking device footprint.”

Measuring just 8 x 8 x 1.7 mm, the new power MOSFETs also feature class-leading linear mode / safe operating area (SOA) characteristics for safe and reliable switching at high current conditions. SOA at 1 ms, 20 VDS operating conditions is 35 A due to a combination of silicon and package, while at 10 ms, 20 VDS where the package dominates, SOA is 17 A. These figures are 1.5 - 2x better than the competition. The devices also offer the best single pulse avalanche rating (EAS) at 2.3 J and very strong ID current rating of 500 A, which – unlike some competing devices – is a measured rather than theoretical limit.

The size and performance benefits afforded by the Nexperia 8 x 8 mm LFPAK88 MOSFETs enable designers to replace two paralleled old-style components with one new LFPAK88, simplifying manufacturing and increasing reliability. The AEC-Q101-qualified BUK7S0R5-40H parts – which deliver more than twice the reliability performance demanded by the automotive standard – suit braking, power steering, reverse battery protection, e-fuse, DC-DC converter and motor control applications. The industrial PSMNR55-40SSH MOSFETs suit battery isolation, current limitation, e-fuse, motor control, synchronous rectification and load switch applications in power tools, appliances, fans, and e-bikes, scooters and wheelchairs.

For more information, including product specs and datasheets, visit www.nexperia.com/lfpak88.  To find out more about the unique construction of the LFPAK88 copper-clip package watch https://bit.ly/3yd47xQ

2021052703 / 27.05.2021 / Electronic-components / NEXPERIA /

Nexperia invests $700 million in 2021/2022 to boost production capacity
New technologies, laboratories and people reflect confidence in the resurgent market for semiconductors worldwide

Low RDS(on) 40 V MOSFETs from Nexperia deliver highest power density for Automotive and Industrial applications
Class-leading SOA and Avalanche characteristics increase ruggedness and reliability

New Trench Schottky rectifiers from Nexperia increase efficiency for fast switching applications
AEC-Q101 approved devices up to 100 V and 20 A combine low switching losses and increased safe operating area

Nexperia’s 650 V GaN FETs enable 80 PLUS ® Titanium-class power supplies operating at 2 kW and above
Power GaN solution reduces component count, shrinks form factor & minimizes system costs

Nexperia announces new ESD protection devices for high-speed interfaces in automotive applications
High performance 4-channel ESD protection for automotive multimedia and video link applications offering ideal signal integrity

Nexperia and United Automotive Electronic Systems Co., Ltd. Agree Comprehensive Partnership for Gallium Nitride
Program will address the technical requirements for the power systems in electric vehicles

Nexperia extends LFPAK56D MOSFET line-up with AEC-Q101-qualified half-bridge package
Space-saving LFPAK56D half-bridge offers 60 % lower parasitic inductance and improved thermal performance for power train, motor control and DC/DC application

Nexperia announces plans to grow global production and increase R&D spend
New investments support global strategy to address growing demand for power semiconductors and boost GaN capabilities

Nexperia launches compact ‘2 in 1’ protection for high-speed data lines
Nexperia announced three new TrEOS protection devices that provide the most compact method to suppress ESD in USB3.2, HDMI2.1 and other high-speed data lines. The new PUSB3BB2DF, PESD5V0C2BDF, PESD4V0Z2BCDF devices provide best-in-class ESD protection and system robustness by combining high RF performance with very low clamping and very high surge capability.

Nexperia leads with industry’s first 80 V RETs for 48 V automotive and other higher voltage bus circuits
Nexperia announced industry’s first 80 V RET (Resistor-Equipped Transistor) family. These new RETs or ‘digital transistors’ provide enough headroom for use in 48 V automotive board net (e.g. mild hybrid and EV cars) and other higher voltage circuits which are often subject to large spikes and pulses that previous 50 V parts cannot handle.

Rugged AEC-Q101 MOSFETs from Nexperia offer guaranteed repetitive avalanche performance tested to one billion cycles
Dual-MOSFET devices simplify automotive solenoid control circuits by saving space, reducing component count and improving reliability.

Nexperia launches AEC-Q101-qualified, leadless CAN-FD protection diodes with industry-leading ESD performance
Nexperia, the expert in essential semiconductors, has announced new leadless ESD protection devices for CAN-FD applications. Devices are available in leadless packages with side-wettable flanks that enable AOI tools to be used. Fully AEC-Q101-qualified, the PESD2CANFDx series parts also offer industry-leading ESD and RF performance, and save PCB space.

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