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Nexperia obtains 100% ownership of Newport Wafer Fab, to be renamed Nexperia Newport.
Welsh semiconductor plant to focus on MOSFETs, IGBT, Analog and Compound Semiconductor Automotive-grade products

Nexperia, the expert in essential semiconductors, has completed the transaction to acquire Newport Wafer Fab (NWF), contributing to the company’s growth ambitions and investments to boost global production capacity. With the acquisition, Nexperia obtains 100% ownership of the Welsh semiconductor production facility. Nexperia Newport will continue to have a strong position in the Welsh ecosystem and technology development and will secure the current jobs at the Newport site and others across the region.

Nexperia is a customer of the foundry services offered by Newport Wafer Fab and became its second largest shareholder in 2019. The Newport site complements Nexperia’s other European manufacturing operations in Manchester and Hamburg, which have also seen significant recent investments.

Commented Achim Kempe, Nexperia’s Chief Operations Officer: “We are very excited to include Newport as part of our global manufacturing footprint. Nexperia has ambitious growth plans and adding Newport supports the growing global demand for semiconductors. The Newport facility has a very skilled operational team and has a crucial role to play to ensure continuity of operations. We look forward to building a future together”.

Added Paul James, Managing Director at the Newport site: “The acquisition is great news for the staff here in Newport and the wider business community in the region as Nexperia is providing much-needed investment and stability for the future. We are looking forward to becoming part of the global Nexperia team and are keen to keep the current workforce. Additional local resources may be required too. We are also pleased that we will be able continue to contribute to the local ecosystem.”

Drew Nelson, departing chairman Newport said: “The change in ownership of the Newport site marks an important step for the future of the facility as well as for the region. We are pleased that we are able to maintain the expertise in developing high end silicon devices in the 200 mm wafer fab while at the same time opening up opportunities for us to add new semiconductor technologies”.

The Newport semiconductor production site was first established in 1982 and was originally named INMOS. Current capacity is over 35,000 200 mm wafer starts per month covering a wide range of semiconductor technologies ranging from MOSFETs and Trench IGBTs using wafer thinning methods to CMOS, analogue and compound semiconductors. It will support Nexperia’s strategic 10 bln USD growth ambition and enrich Nexperia’s product lines in IGBT, Analog and compound semiconductors in parallel to the current 8” investments at the Manchester and Hamburg wafer fabs.  This acquisition significantly enhances the automotive-qualified product supply capability and the market share of Nexperia.

For more information visit www.nexperia.com/about

2021071803 / 20.07.2021 / Various / NEXPERIA /

Nexperia obtains 100% ownership of Newport Wafer Fab, to be renamed Nexperia Newport.
Welsh semiconductor plant to focus on MOSFETs, IGBT, Analog and Compound Semiconductor Automotive-grade products

ITEC emerges as independent semiconductor equipment manufacturer in time to address semiconductor shortage with highest productivity chip-assembly systems
Fastest assembly and electrical test equipment; integrated smart manufacturing solutions using Big Data and machine learning for optimised Industry 4.0

First products from Nexperia’s new Manchester 8-inch wafer line are industry-leading Qrr Figure of Merit 80 V / 100 V MOSFETs
Nexperia announced that the first products to be made in the company’s new 8-inch wafer line in Manchester, UK, will be low RDS(on), low Qrr 80 V and 100 V MOSFETs using its latest NextPower silicon technology.

Nexperia invests $700 million in 2021/2022 to boost production capacity
New technologies, laboratories and people reflect confidence in the resurgent market for semiconductors worldwide

Low RDS(on) 40 V MOSFETs from Nexperia deliver highest power density for Automotive and Industrial applications
Class-leading SOA and Avalanche characteristics increase ruggedness and reliability

New Trench Schottky rectifiers from Nexperia increase efficiency for fast switching applications
AEC-Q101 approved devices up to 100 V and 20 A combine low switching losses and increased safe operating area

Nexperia’s 650 V GaN FETs enable 80 PLUS ® Titanium-class power supplies operating at 2 kW and above
Power GaN solution reduces component count, shrinks form factor & minimizes system costs

Nexperia announces new ESD protection devices for high-speed interfaces in automotive applications
High performance 4-channel ESD protection for automotive multimedia and video link applications offering ideal signal integrity

Nexperia and United Automotive Electronic Systems Co., Ltd. Agree Comprehensive Partnership for Gallium Nitride
Program will address the technical requirements for the power systems in electric vehicles

Nexperia extends LFPAK56D MOSFET line-up with AEC-Q101-qualified half-bridge package
Space-saving LFPAK56D half-bridge offers 60 % lower parasitic inductance and improved thermal performance for power train, motor control and DC/DC application

Nexperia announces plans to grow global production and increase R&D spend
New investments support global strategy to address growing demand for power semiconductors and boost GaN capabilities

Nexperia launches compact ‘2 in 1’ protection for high-speed data lines
Nexperia announced three new TrEOS protection devices that provide the most compact method to suppress ESD in USB3.2, HDMI2.1 and other high-speed data lines. The new PUSB3BB2DF, PESD5V0C2BDF, PESD4V0Z2BCDF devices provide best-in-class ESD protection and system robustness by combining high RF performance with very low clamping and very high surge capability.

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